Method to build multi level structure
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United States of America Patent
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Jul 2, 2002
Grant Date -
N/A
app pub date -
Aug 24, 1999
filing date -
Aug 24, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.
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