Method for constructing heat resistant electrode structures on silicon substrates
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United States of America Patent
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Jul 9, 2002
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N/A
app pub date -
Aug 23, 1997
filing date -
Aug 23, 1997
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Expired
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Abstract
A method for constructing an electrode on a silicon substrate in which the electrode will be subjected to high temperatures during subsequent processing steps. A titanium oxide layer is deposited on the silicon substrate and annealed at a temperature higher than any subsequent temperature to which the titanium oxide layer will be subjected. The electrode is then deposited on the titanium oxide layer. The electrode is preferably platinum or a titanium/platinum composition. The platinum is also annealed to a temperature higher than any subsequent temperature to which the electrode will be subjected. In the preferred embodiment of the present invention, the electrode is constructed in a trench that is etched in a layer of metallic titanium that is deposited over the titanium oxide layer.
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