Importance

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Abstract

The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with preselected composition. In one embodiment, the composition of the alternated AlGaInP layers is an ohmic n-electrode on a rear surface of a GaAs substrate: a distributed AlGaAs Bragg reflecting layer in the form of a multi-layer lamination; a first, lower AlGaInP cladding layer grown on the reflecting layer; an AlGaInP active layer grown on the lower cladding layer; a second, upper AlGaInP cladding layer grown on the active layer; a strain layer grown on the second cladding layer, the strain layer comprising a superlattice structure in the form of a plurality of thin alternated AlGaInP layers with the composition: (Al.sub.x Ga.sub.1-x).sub.1-y In.sub.y P/(Al.sub.n Ga.sub.1-n).sub.1-h In.sub.h P, where 0.5.ltoreq.x.ltoreq.1; 0.4.ltoreq.y.ltoreq.0.6/0.ltoreq.a.ltoreq.0.4; 0.ltoreq.b.ltoreq.0.4.

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First Claim