High voltage MOS devices with high gated-diode breakdown voltage and punch-through voltage
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 9, 2002
Grant Date -
Feb 21, 2002
app pub date -
Aug 29, 1997
filing date -
Aug 30, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A transistor device suitable for high voltage and low voltage applications, while maintaining minimum channel lengths. In one embodiment, pocket implants (310) are formed in a minimum channel device causing a reverse channel effect. The reverse channel effect is optimized for the minimum channel length of the device. Field implants (120), enhancement implants (130), and wells (140) are all formed using a single mask.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully