Tungsten hard mask for dry etching aluminum-containing layers
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United States of America Patent
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Jul 16, 2002
Grant Date -
N/A
app pub date -
Aug 2, 1999
filing date -
Aug 2, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for patterning an aluminum-containing layer. A tungsten-containing layer is provided over an aluminum-containing layer. The tungsten-containing layer is patterned to form an opening therein, so that the opening exposes an underlying portion of the aluminum-containing layer. The patterned tungsten-containing layer is exposed to an etch having a substantially higher etch rate of the aluminum-containing layer than of the tungsten-containing layer to remove the exposed portion of the aluminum-containing layer.
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