Superconducting damascene interconnected for integrated circuit
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United States of America Patent
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Jul 16, 2002
Grant Date -
N/A
app pub date -
Apr 27, 2001
filing date -
Apr 27, 2001
priority date (Note) -
Expired
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Abstract
A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method includes forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y--Ba--Cu alloy; and annealing in oxygen flow to form a Y--Ba--Cu--O superconductor on the barrier layer. In one embodiment, the superconductor has a formula YBa.sub.2 Cu.sub.3 O.sub.7-x, wherein x.ltoreq.0.5. In another embodiment, the method includes forming a cavity in an interlevel dielectric; forming a Y--Ba--Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y--Ba--Cu alloy layer; filling the cavity by electrodepositing a Y--Ba--Cu alloy fill; and annealing in oxygen flow to form a Y--Ba--Cu--O superconductor on the dielectric.
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