Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium
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United States of America Patent
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Jul 16, 2002
Issued Date -
N/A
app pub date -
Jan 25, 2001
filing date -
Jun 30, 1995
priority date (Note) -
Expired
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Abstract
A semiconductor device such as DRAM including a capacitor, wherein a lower electrode of the capacitor is a metal electrode, the metal electrode being mainly composed of ruthenium or iridium, and being connected directly to a capacitor dielectric film through no oxide layer of materials of the metal electrode formed on the surface of the metal electrode. The lower electrode made of iridium or ruthenium can easily be processed as compared with the conventional case where platinum is employed to form the electrode and also can not be oxidized when the capacitor dielectric film is formed, thus reduction in the capacitance can be prevented.
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