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Abstract

A method and apparatus for singulating semiconductor wafers is described. The method comprises the steps of aiming a laser beam at a layer placed over the substrate; absorbing energy from the laser beam into the layer; forming scribe lines in the layer by scanning the laser beam across the layer; and cutting through the substrate along the scribe lines with a saw blade to singulate the wafer. The apparatus includes a laser placed over the coating layer of the substrate, and a saw blade mounted over a surface of the substrate. The coating layer has a first absorption coefficient relative to a wavelength of the laser and the semiconductor substrate has a second absorption coefficient less than the first absorption coefficient. Energy from the laser beam is absorbed into the coating layer to form scribe lines therein, and the saw blade cuts through the substrate along the scribe lines.

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First Claim