Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
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United States of America Patent
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Jul 16, 2002
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app pub date -
Jun 28, 2001
filing date -
Jun 28, 2001
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Abstract
Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precursors is well suited to forming high dielectric constant materials on hydrogen passivated silicon surfaces.
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