One-time programmable memory cell in CMOS technology

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Jul 16, 2002
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Mar 7, 2002
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Dec 22, 1999
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Dec 23, 1998

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Abstract

An OTP memory cell in CMOS technology, including a capacitor associated in series with an unbalanced programming transistor, the drain of which is made of a region deeper and less doped than the source.

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Patent Owner	Address
STMICROELECTRONICS S A	FRANCE

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G11C:STATIC STORES

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Inventor Name	Address	# of filed Patents	Total Citations
Candelier, Philippe	Saint Mury Monteymond, FR	25	171
Schoellkopf, Jean-Pierre	Grenoble, FR	32	317

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One-time programmable memory cell in CMOS technology

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United States of America Patent

09470897

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PATENT NO	6421293
APP PUB NO	20020027822A1
SERIAL NO	09470897
DOCKET NO

US Family Size	Non-US Coverage
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DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
July 16, 2002	US,6421293,B1 US6421293B1	GRANTED PATENT AS FIRST PUBLICATION
March 07, 2002	US,20020027822,A1 US20020027822A1	FIRST PUBLISHED PATENT APPLICATION

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09470897

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