Plasma processing apparatus and method

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United States of America Patent

PATENT NO 6423383
SERIAL NO

09196141

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A plasma processing apparatus and method is equipped with a reaction chamber, a microwave generator for generating a microwave within the reaction chamber, and main and auxiliary magnets for producing a magnetic filed parallel with microwave propagation direction. The auxiliary magnet is located along the wall of the reaction chamber so as to strengthen the magnetic filed at the periphery of the reaction chamber. A reactive gas containing a carbon compound gas is introduced into the chamber wherein the reactive gas is converted into a plasma by a resonance using the microwaves and the magnetic field. The presence of the auxiliary magnet produces a centrifugal drifting force within the reaction chamber, thereby confining the plasma gas to the center of the chamber. A substrate is then placed within the chamber and a film comprising amorphous carbon is deposited thereon.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirose, Naoki Atsugi, JP 48 1792
Inujima, Takashi Atsugi, JP 35 1500
Takayama, Toru Atsugi, JP 534 28168

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