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Abstract

The present invention relates to a process for the fabrication of contact structures in semiconductor components, in particular, solar cells, such as semiconductor components having such contact structures. According to one aspect of the present invention, after positioning of an etching mask (3) over a first layer respectively sequence of layers (2), indentations are etched through the first layer down to or into a second layer (1) lying therebelow. The etching occurs in such a manner that the etching mask (3) is undercut and/or at least one region of the first layer (2) contains negative flanks. Subsequently an electrically conductive material (9) is introduced into the indentations, with the etching mask (3) or the first layer (2) forming a shadow mask for the introduction of this material. This conductive material is only introduced to a height in the indentations at which there is no contact between the conductive material (9) and the first layer (2). These structures permit, for the first time, contacting the base through the emitter without additional masking. The present invention permits thereby simpler fabrication and more cost effective fabrication of metal contacts on solar cells.

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First Claim