Semiconductor integrated circuit device and process for manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jul 23, 2002
Grant Date -
Apr 25, 2002
app pub date -
Aug 31, 2001
filing date -
Oct 23, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
There is provided a technique for forming an Ru film on the bottom of a deep hole with a considerable film thickness for the lower electrode of an information storage capacity element in order to improve the yield of manufacturing DRAMs. The Ru film is formed on the side wall and the bottom of a deep hole as material for preparing the lower electrode of an information storage capacity element to be produced there under the condition of a gasification flow rate ratio of the raw materials ((Ru(C.sub.2 H.sub.5 C.sub.5 H.sub.4).sub.2 /O.sub.2) is not less than 10%. Then, the ratio of the film thickness of the Ru film on the bottom 'b' of the hole to the largest film thickness 'a' of the Ru film in the hole is not less than 50%.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully