Method and apparatus for forming ultra-shallow junction for semiconductor device
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United States of America Patent
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Jul 23, 2002
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N/A
app pub date -
Nov 9, 2000
filing date -
Nov 9, 2000
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Abstract
A practical, low-cost method for forming an ultra-shallow junction in a semiconductor material is provided. The method is directed to an initial RTA process using a heat source at a selected temperature and time sufficient to eliminate lattice defects without significant diffusion of the dopants, along with subsequent exposure to electromagnetic radiation having a frequency in the range of the resonance frequency of interstitial impurity ions. The intensity of the electric field is selected to be proportional to the value of the activation barrier potential of the impurity ions. The method may be used for any dopant material.
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