Electron beam modification of perhydrosilazane spin-on glass
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United States of America Patent
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Jul 30, 2002
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N/A
app pub date -
Dec 28, 1999
filing date -
Dec 28, 1999
priority date (Note) -
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Abstract
The invention pertains to dielectric films for the production of microelectronic devices. A spin-on glass film is produced by depositing a silazane polymer containing composition film onto a substrate and then exposing the film to electron beam radiation. The electron beam exposing step is conducted by overall exposing the dielectric layer with a wide, large beam of electron beam radiation from a large-area electron beam source.
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