Methods for forming iridium and platinum containing films on substrates
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United States of America Patent
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Jul 30, 2002
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app pub date -
Feb 22, 2001
filing date -
Sep 3, 1998
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Abstract
A method of forming an iridium and platinum containing film on a substrate, such as a semiconductor wafer using complexes of the formula L.sub.y IrX.sub.z, wherein: each L group is independently a neutral or anionic ligand; each Y group is independently a pi bonding ligand selected from the group of CO, NO, CN, CS, N.sub.2, PX.sub.3, PR.sub.3, P(OR).sub.3, AsX.sub.3, AsR.sub.3, As(OR).sub.3, SbX.sub.3, SbR.sub.3, Sb(OR).sub.3, NH.sub.x R.sub.3-x, CNR, and RCN, wherein R is an organic group and X is a halide; y=1 to 4; z=1 to 4; x=0 to 3.
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