Semiconductor device

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United States of America Patent

PATENT NO 6426520
SERIAL NO

09636111

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Abstract

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A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (23, 24) of a first semiconductor type, and the voltage termination structure comprises first and second layers (21 and 22) formed within the substrate region. The first and second layers (21 and 22) define regions each of a second semiconductor type.

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Patent Owner(s)

  • DYNEX SEMICONDUCTOR LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amaratunga, Gehan Anil Joseph Cambridge, GB 31 1812
Traijkovic, Tatjana Cambridge, GB 2 25
Udrea, Florin Cambridge, GB 118 1229

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