Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes and a process for their fabrication
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United States of America Patent
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Aug 6, 2002
Issued Date -
N/A
app pub date -
Jul 20, 2000
filing date -
Sep 5, 1996
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Expired
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Abstract
The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.
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