Surface preparation of a substrate for thin film metallization
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United States of America Patent
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Aug 13, 2002
Grant Date -
N/A
app pub date -
Aug 12, 1999
filing date -
Aug 12, 1999
priority date (Note) -
Expired
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Abstract
A substrate is prepared for thin film metallization by applying one or more substantially conformal films or layers of a silicon glass onto the surface of the substrate. The total thickness of the glass on the substrate is not more than approximately 12,000 to 15,000 Angstroms and preferably between about 4000 and 6000 Angstroms. The glass is preferably deposited substantially uniformly onto the substrate surface so that the topographical features of the underlying substrate are not significantly changed by the presence of the glass.
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