Method for fabricating an emitter-base junction for a gallium nitride bipolar transistor
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United States of America Patent
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Aug 13, 2002
Grant Date -
N/A
app pub date -
Jul 24, 2000
filing date -
Jul 22, 1999
priority date (Note) -
Expired
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Abstract
The present invention comprises methods for producing semiconductor devices useful in high temperature applications. The invention is based on using silicon ion implantation to convert a portion of the p-type base layer of magnesium-doped GaN into n-type GaN. The boundary of the n-type GaN within the p-type layer then becomes an n-p diode junction which can function as the emitter-base junction. The present methods utilize ion implantation to convert a portion of the p-type layer to n-type thereby forming an n-p junction having desirable diode characteristics. The invention also includes BJT and HBT devices incorporating the present implanted n-p diode junctions.
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