Film forming method and manufacturing method of semiconductor device
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United States of America Patent
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Aug 13, 2002
Grant Date -
Nov 1, 2001
app pub date -
Mar 13, 2001
filing date -
Mar 31, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P.sub.2 O.sub.3 on a substrate by using the deposition gas.
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