Importance

Loading Importance Indicators...

Abstract

A semiconductor laser which can emit at high output, for which the threshold current and efficiency have a low temperature dependence. In GaInAs/GaInAsP semiconductor lasers, the lower the holding temperature, the higher the slope efficiency. As the operation temperature rises, and the threshold current becomes larger, the loss coefficient increases. As a result, external quantum efficiency falls and output drops. Accordingly, in order to enable applications in broad technical fields, the semiconductor laser emits at high output, for which the threshold current and efficiency have a low temperature dependence. The semiconductor laser includes a compressively strained quantum well semiconductor laser employing GaInAs/GaInAsP, carrier blocking layers are provided in a p-type waveguide layer and n-type waveguide layer having a band gap which is larger than the band gap of a smallest band gap of the waveguide layers.

Loading the Abstract Image...

First Claim