Plasma CVD apparatus and plasma processing method
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United States of America Patent
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Aug 20, 2002
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N/A
app pub date -
Aug 22, 1997
filing date -
Aug 22, 1996
priority date (Note) -
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Abstract
A plasma CVD apparatus comprising a substantially enclosed reaction chamber containing substrate holding means and a cathode electrode arranged therein, wherein a high frequency power from a high frequency power source is supplied to said cathode electrode to generate plasma between said substrate holding means having a subtrate positioned thereon and said cathode electrode whereby plasma-processing said substrate, characterized in that said cathode electrode comprises a plurality of conductor members situated on substantially the same axis which are capacitively coupled by a dielectric member. A plasma-processing method using said cathode electrode.
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