Importance

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Abstract

The present disclosure pertains to the discovery that TiN films having a thickness of greater than about 400 .ANG. and, particularly greater than 1000 .ANG., and a resistivity of less than about 175 .mu..OMEGA.cm, can be produced by a CVD technique in which a series of TiN layers are deposited to form a desired TiN film thickness. Each layer is deposited employing a CVD deposition/treatment step. During a treatment step, residual halogen (typically chlorine) was removed from the CVD deposited film. Specifically, a TiN film having a thickness of greater than about 400 .ANG. was prepared by a multi deposition/treatment step process where individual TiN layers having a thickness of less than 400 .ANG. were produced in series to provide a finished TiN layer having a combined desired thickness. Each individual TiN layer was CVD deposited and then treated by exposing the TiN surface to ammonia in an annealing step carried out in an ammonia ambient. The TiN film formed in this manner not only had a resistivity of less than about 175 .mu..OMEGA.cm, but was substantially free of micro cracks as well, including films having a thickness greater than 1,000 .ANG..

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First Claim