Integrated circuit capacitor
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United States of America Patent
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-
Aug 20, 2002
Grant Date -
N/A
app pub date -
Jun 29, 2000
filing date -
Jun 29, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates. The films may be undercut by different etchants at respective connection apertures to avoid formation of connections or connections made by doped polysilicon of different conductivities forming connections to some plates of similarly doped polysilicon and blocking diode junctions with oppositely doped polysilicon. The blocking diodes may include a compensation implant to adjust reverse breakdown characteristics and provide transient and electrostatic discharge protection.
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