Method for producing a titanium monophosphide layer and its use
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United States of America Patent
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Sep 3, 2002
Grant Date -
N/A
app pub date -
May 28, 1999
filing date -
Nov 29, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method for producing a titanium monophosphide layer, a carrier is first placed in a reactor. Thereafter, a TiN layer is deposited on the carrier by supplying TiCl.sub.4 ad NH.sub.3 into the reactor. The TiN layer is annealed immediately after deposition of the TiN layer while PH.sub.3 is supplied to the reactor, in order to form the titanium monophosphide layer on the TiN layer.
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