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Abstract

Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0.8 Torr and temperatures of about 270-350.degree. C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.

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First Claim