Semiconductor device
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United States of America Patent
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Sep 3, 2002
Issued Date -
N/A
app pub date -
Aug 10, 2000
filing date -
Aug 11, 1999
priority date (Note) -
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Abstract
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate region (12) of a first semiconductor type. The voltage termination structure comprises at least one first termination region (11) of a second semiconductor type, the or each first termination region having at least one of either second and third termination regions (11a, 11b) of third and fourth semiconductor types located at substantially opposing edges thereof. The second and third termination regions (11a, 11b) respectively have a higher semiconductor doping concentration than the edge portion substrate region (12) and a lower semiconductor doping concentration than the first termination region(s) (11).
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