Methods for fabricating stepped etalons
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United States of America Patent
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Sep 10, 2002
Grant Date -
N/A
app pub date -
Nov 8, 2000
filing date -
Nov 8, 2000
priority date (Note) -
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Abstract
The specification describes stepped etalon structures and techniques for their fabrication. The preferred etalon material is LiCaAlF.sub.6, which is not efficiently processed using reactive ion etching. The approach of the invention is to produce the steps on the etalon by depositing a blanket layer of step material that is effectively etched by RIE, masking a portion of the step material, and etching the masked blanket layer using the LiCaAlF.sub.6 substrate as an etch stop. These process steps may be repeated to form multiple steps on the etalon. Etalon structures with steps on both major surfaces are described, as well as etalon structures with steps having differing areas. In the latter case a difference in amplitude in the output signal from a single detector can be used to identify the step that is resonating.
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