Method of improving moisture resistance of low dielectric constant films
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United States of America Patent
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Sep 10, 2002
Grant Date -
Oct 4, 2001
app pub date -
Feb 21, 2001
filing date -
Nov 4, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10W to about 500W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
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