Metallization line layout
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United States of America Patent
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Sep 10, 2002
Issued Date -
N/A
app pub date -
Sep 2, 1999
filing date -
Aug 14, 1995
priority date (Note) -
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status (Latency Note)
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Abstract
The present invention relates to metallization line layouts that minimize focus offset sensitivity by a substantial elimination of thin isolated metallization line segments that are inadequately patterned during formation of a mask. The present invention also relates to a metallization line layout that staggers unavoidable exposures. Embodiments of these metallization line layouts include enhanced terminal ends of isolated metallization lines, filled inter-metallization line spaces, and additional 'dummy' metal shapes in open areas. The present invention also relates to a method of forming a metallization layer such that a substantially deposited, planarized interlayer dieletric layer can be formed without etchback or chemical-mechanical polishing
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