Method and apparatus for generating high-density uniform plasma
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United States of America Patent
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Sep 17, 2002
Grant Date -
N/A
app pub date -
Apr 10, 2000
filing date -
Apr 10, 2000
priority date (Note) -
Expired
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Abstract
A method and a reactor of plasma treating a wafer with high induction plasma density and high uniformity of reactive species were disclosed in this invention. The inductively coupled plasma reactor of the present invention includes a vacuum chamber having a dielectric ceiling thereof and a unique coil configuration atop on the dielectric ceiling, wherein the dielectric ceiling is designed to have a different height according to its shape, e.g., a planar, dish-shaped or hat-shaped dielectric ceiling, for coupling an RF power into the chamber to excite the plasma. The unique coil configuration contains plural helical coils which are arranged in series or in parallel to provide a high-density uniform ion plasma for a large wafer treatment.
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