Control of abnormal growth in dichloro silane (DCS) based CVD polycide WSix films
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United States of America Patent
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Sep 17, 2002
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N/A
app pub date -
Apr 4, 2001
filing date -
Mar 28, 2001
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Abstract
In a process for mitigating and/or eliminating the abnormal growth of underlying polysilicon in dichloro silane-based CVD polycide WSix films, a first technique conducts the deposition of the underlying polysilicon layer at a temperature that substantially avoids crystallization of the underlying polysilicon. A second approach reduces the exposure (for example time period and or concentration) of the mono-silane SiH.sub.4 post flush, so as to avoid infusion of silicon into the underlying polysilicon layer, and resulting abnormal growth. In this manner, abnormal effects, such as stress fractures formed in subsequent layers, can be eliminated.
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