Current isolating epitaxial buffer layers for high voltage photodiode array
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United States of America Patent
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Sep 17, 2002
Grant Date -
Jun 13, 2002
app pub date -
Dec 8, 2000
filing date -
Dec 9, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.
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