Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout

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United States of America Patent

PATENT NO 6453457
SERIAL NO

09676356

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Abstract

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Techniques for fabricating a device include forming a fabrication layout such as a mask layout, for a physical design layer, such as a design for an integrated circuit, and identifying evaluation points on an edge of a polygon corresponding to the design layer for correcting proximity effects. Included are techniques that correct for proximity effects associated with an edge in a layout corresponding to a design layer. An evaluation point is determined for the edge based on a profile of amplitudes output from a proximity effects model along a transect. The transect includes a target edge in the design layer corresponding to the edge. It is then determined how to correct at least a portion of the edge for proximity effects based on an analysis at the evaluation point. In other techniques, a dissection length parameter is derived based on a profile of amplitudes output by a proximity effects model along a transect. The transect includes a second edge in a second layout. An evaluation point is determined for a first edge based on the dissection length parameter. Then it is determined how to correct at least a portion of the first edge based on an analysis at the evaluation point.

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Patent Owner(s)

Patent OwnerAddress
SYNOPSYS MERGER HOLDINGS LLC700 E MIDDLEFIELD ROAD MOUNTAIN VIEW CA 94043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pierrat, Christophe Santa Clara, CA 193 6320
Zhang, Youping Newark, CA 67 2240

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