Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout
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United States of America Patent
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Sep 17, 2002
Grant Date -
N/A
app pub date -
Sep 29, 2000
filing date -
Sep 29, 2000
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Abstract
Techniques for fabricating a device include forming a fabrication layout such as a mask layout, for a physical design layer, such as a design for an integrated circuit, and identifying evaluation points on an edge of a polygon corresponding to the design layer for correcting proximity effects. Included are techniques that correct for proximity effects associated with an edge in a layout corresponding to a design layer. An evaluation point is determined for the edge based on a profile of amplitudes output from a proximity effects model along a transect. The transect includes a target edge in the design layer corresponding to the edge. It is then determined how to correct at least a portion of the edge for proximity effects based on an analysis at the evaluation point. In other techniques, a dissection length parameter is derived based on a profile of amplitudes output by a proximity effects model along a transect. The transect includes a second edge in a second layout. An evaluation point is determined for a first edge based on the dissection length parameter. Then it is determined how to correct at least a portion of the first edge based on an analysis at the evaluation point.
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Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| SYNOPSYS MERGER HOLDINGS LLC | 700 E MIDDLEFIELD ROAD MOUNTAIN VIEW CA 94043 |
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- [Patents Count]
Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Pierrat, Christophe | Santa Clara, CA | 193 | 6320 |
| Zhang, Youping | Newark, CA | 67 | 2240 |
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| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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