Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
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United States of America Patent
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Sep 24, 2002
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app pub date -
Dec 21, 2001
filing date -
Dec 21, 2001
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Abstract
A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.
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