Increasing the yield of precise wavelength lasers
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United States of America Patent
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Sep 24, 2002
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N/A
app pub date -
May 3, 2001
filing date -
May 3, 2001
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Abstract
A wafer supporting a semiconductor structure having a material gain function that would preferentially support an F-P laser mode at an unwanted wavelength .lambda.2 is provided with a second order dielectric grating located sufficiently remotely from the high intensity optical field of the quantum well and the waveguide to receive just enough transverse mode energy to provide feedback to reduce the gain at .lambda.2 and support oscillation at a desired wavelength .lambda.1. More particularly, by providing a gain discrimination factor .alpha..apprxeq.0.1 cm.sup.-1, the fraction of power lost to transverse mode radiation can be held to about 1% which is sufficient to provide stabilizing feedback without sapping too much energy from the longitudinal beam.
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