Semiconductor device and method of manufacturing the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 24, 2002
Grant Date -
Feb 14, 2002
app pub date -
Feb 9, 2001
filing date -
Aug 10, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor device and a method of manufacturing thereof are provided wherein no hollow area is generated in a contact wiring plug which is formed in the interlayer insulation layer. According to the method of manufacturing of this semiconductor device, a contact wiring plug 13 of a two layered structure of a barrier metal layer and a tungsten layer is formed by using a spattering method or the like. At this time, since the recessed part 10a has a shape which gradually spreads to the outside to a greater degree in relation to the closeness to the upper surface, the formation of the contact wiring plug 13 is carried out under excellent covering conditions. As a result, a semiconductor device wherein no hollow area is generated in the contact wiring plug, which is formed in the interlayer insulation layer, can be gained.
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