Importance

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Abstract

A thin film transistor device reduced substantially in resistance between the source and the drain regions by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed surface of the source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 .mu.m or less in width, and allowing the metal to react with silicon. Accordingly, a high performance TFT is realized since the metal silicide layer achieves favorable contact with the source and drain regions, and, since it has lower resistivity than silicon, the parasitic resistance between the source and drain regions can be considerably lowered.

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First Claim