Hybrid resistive cross point memory cell arrays and methods of making the same

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United States of America Patent

PATENT NO 6456524
SERIAL NO

10000636

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Abstract

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A data storage device that includes a novel resistive cross point memory cell array and a method of making the data storage device are described. The resistive cross point memory cell array enables high-density fabrication and high-speed operation with isolation diodes that have practical dimensions and current density characteristics. In addition, the data storage device includes a novel equipotential isolation circuit that substantially avoids parasitic currents that otherwise might interfere with the sensing of the resistance state of the memory cells. In one aspect, the memory cells of the resistive cross point memory cell array are arranged into multiple groups of two or more memory cells. The memory cells of each group are connected between a respective word line and a common isolation diode that is coupled to a bit line.

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Patent Owner(s)

Patent OwnerAddress
DATA QUILL LIMITEDAKARA BUILDING 24 DE CASTRO STREET ROAD TOWN TORTOLA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Perner, Frederick A Palo Alto, CA 147 4168
Tran, Lung Saratoga, CA 25 560

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