Importance

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Abstract

A synchronous flash memory includes an array of non-volatile memory cells. The memory device has a package configuration that is compatible with an SDRAM. In one embodiment, the present invention can include a memory device comprising an array of memory cells arranged in addressable blocks and an n-bit status register. The memory includes a control circuit coupled to the n-bit status register to program a first bit of the n-bits to a first state indicating if a program operation is being performed on the array. The control circuit further programs second and third bits of the n-bits to identify one of the addressable blocks while the array is being programmed. A method of operating a memory device includes initiating a write operation on a first programmable location of the memory device using a first processor, and reading a status from status data stored in the memory device during the write operation. The status indicates an identification of the first programmable location.

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First Claim