Method of metal oxide thin film cleaning
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United States of America Patent
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Oct 1, 2002
Grant Date -
N/A
app pub date -
Sep 26, 2001
filing date -
Sep 26, 2001
priority date (Note) -
Expired
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Abstract
A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200.degree. C. The wafer may also be cleaned by dipping in a polar organic solvent and subjecting the wafer to ultrasound while immersed in the solvent.
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