High performance P-type thermoelectric materials and methods of preparation

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United States of America Patent

PATENT NO 6458319
SERIAL NO

08820019

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Abstract

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The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein 0.ltoreq.x.ltoreq.4, A is a transition metal, B is a pnicogen, and 0.ltoreq.y.ltoreq.3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn.sub.4 Sb.sub.3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
CALIFORNIA INSTITUTE OF TECHNOLOGYPASADENA, CA2309

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Borshchevsky, Alexander Santa Monica, CA 11 261
Caillat, Thierry Pasadena, CA 18 307
Fleurial, Jean-Pierre Duarte, CA 32 444

Cited Art Landscape

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* 5356485 Intermetallic thermocouples 11 1992
 
Agency for Science, Technology and Research (1)
* 4902648 Process for producing a thermoelectric module 19 1989
* Cited By Examiner

Patent Citation Ranking

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