Method for fabricating a field-effect transistor having an anti-punch-through implantation region
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United States of America Patent
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Oct 1, 2002
Grant Date -
Jun 21, 2001
app pub date -
Nov 30, 2000
filing date -
Nov 30, 1999
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Abstract
A simple method for fabricating a field-effect transistor having an anti-punch-through implantation region is provided. After the anti-punch-through implantation region is formed, a semiconductor substrate is locally oxidized by using a mask layer in order to form a gate insulation layer. The method allows the fabrication of field-effect transistors having improved short-channel properties.
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