Method for constructing ferroelectric capacitors on integrated circuit substrates
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United States of America Patent
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Oct 1, 2002
Issued Date -
N/A
app pub date -
Jul 13, 1995
filing date -
Nov 2, 1992
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Abstract
A ferroelectric capacitor and method for making the same are disclosed. The ferroelectric capacitor may be constructed on a silicon substrate such as SiO.sub.2 or Si.sub.3 N.sub.4. The ferroelectric capacitor includes a bottom electrode, a layer of ferroelectric material, and a top electrode. The bottom electrode is constructed from a layer of platinum which is bonded to the silicon substrate by a layer of metallic oxide. The metallic oxide does not diffuse into the platinum; hence, a thinner layer of platinum may be utilized for the electrode. This reduces the vertical height of the capacitor and other problems associated with diffusion of the layer used to bond, the bottom electrode to the substrate surface.
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