Method for fabricating a small area of contact between electrodes
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United States of America Patent
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Oct 8, 2002
Issued Date -
N/A
app pub date -
Nov 2, 2000
filing date -
Oct 2, 1996
priority date (Note) -
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Abstract
An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.
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