Induction plasma processing chamber
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United States of America Patent
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Oct 8, 2002
Grant Date -
N/A
app pub date -
Nov 18, 1999
filing date -
Nov 18, 1999
priority date (Note) -
Expired
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Abstract
A method and an apparatus of plasma treating a wafer with low capacitive coupling, high induction power density and high uniformity of reactive species were disclosed in this invention. A first embodiment manages a multiturn helical coil to match with an impedance at an RF drive frequency for reducing capacitive coupling. A second embodiment uses a can-like dielectric to prompt plasma species approaching the wafer surface at a low pressure, thus providing higher plasma density and higher etch rate. A third embodiment uses a cap-like dielectric to raise the ceiling above the wafer for improving the plasma generation uniformity in the chamber.
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