Method of monitoring ion implants by examination of an overlying masking material
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 8, 2002
Grant Date -
N/A
app pub date -
May 12, 2000
filing date -
May 12, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process control method to monitor ion implantation process conditions by measuring the optical properties of a masking material is provided. A patterned masking material may protect underlying regions of a semiconductor substrate from undergoing a chemical or physical change during an ion implantation process. The patterned masking material, however, may also undergo a chemical or physical change during processing. The chemical or physical changes to the masking material during such processing may also cause the optical properties of the material to change. The optical properties of the masking material may be used to determine the concentration of ions implanted into the semiconductor substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully