Contamination controlling method and apparatus for a plasma processing chamber
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United States of America Patent
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Oct 15, 2002
Issued Date -
N/A
app pub date -
Aug 3, 1999
filing date -
Mar 31, 1998
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Abstract
A plasma processing chamber includes a substrate holder and a member of silicon carbide such as a liner, focus ring, perforated baffle or a gas distribution plate, the member having an exposed surface adjacent the substrate holder and the exposed surface being effective to minimize contamination during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the gas distribution plate to energize process gas into a plasma state.
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