Low leakage, low capacitance isolation material
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United States of America Patent
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Oct 15, 2002
Grant Date -
N/A
app pub date -
Jun 26, 1998
filing date -
Jun 26, 1998
priority date (Note) -
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Abstract
A method for reducing a capacitance formed on a silicon substrate includes the step of introducing hydrogen atoms into a portion of said surface to increase the dielectric constant of such portion of the surface increasing the effective thickness of the dielectric material and hence reducing said capacitance. The method includes the step of forming the silicon dioxide layer with a thickness greater than two nanometers. The step of introducing hydrogen includes forming hydrogen atoms in the surface with concentrations of 10.sup.17 atoms per cubic centimeter, or greater. In one embodiment the hydrogen atoms are introduced by baking in hydrogen at a temperature of 950.degree. C. to 1100.degree. C. and pressure greater than 100 Torr. A trench capacitor DRAM cell is provided wherein the hydrogen provides a passivation layer to increase the effective capacitance around a collar region and thereby reduce unwanted transistor action.
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